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  4 pin dip phototransistor photocoupler everlight electronics co., ltd. 1 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series features: ? halogens free. ? current transfer ratio (ctr: 50~600% at i f =5ma, v ce =5v) ? high isolation voltage between input and output (viso=5000 v rms ) ? creepage distance >7.62 mm ? operating temperature up to +110c ? compact small outline package ? pb free and rohs compliant. ? ul approved (no. e214129) ? vde approved (no. 132249) ? semko approved (no. 716108) ? nemko approved (no. p06206474) ? demko approved (no. 313924) ? fimko approved (no. fi 22807) ? csa approved (no. 1143601) ? cqc approved (no. 08001022762 /no. 08001022757) description the el817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. the devices are in a 4-pin dip package and available in wide-lead spacing and smd option. schematic applications ? programmable controllers ? system appliances, measuring instruments ? telecommunication equipments ? home appliances, such as fan heaters, etc. ? signal transmission between circuits of different potentials and impedances pin configuration 1. anode 2. cathode 3. emitter 4. collector
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 2 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series absolute maximum ratings (t a =25c) parameter symbol rating unit forward current i f 50 ma peak forward current (1us, pulse) i fp 1 a reverse voltage v r 6 v input power dissipation no derating required up to t a = 100c p d 70 mw 150 mw power dissipation derating factor (above t a = 8 0c) p c 5.8 mw/ c collector current i c 50 ma collector-emitter voltage v ceo 80 v output emitter-collector voltage v eco 7 v total power dissipation p tot 200 mw isolation voltage *1 v iso 5000 v rms operating temperature t opr -55 ~ +110 c storage temperature t stg -55 ~ +125 c soldering temperature *2 t sol 260 c notes *1 ac for 1 minute, r.h.= 40 ~ 60% r.h. in this te st, pins 1 & 2 are shorted together, and pins 3 & 4 are shorted together. *2 for 10 seconds.
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 3 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series electrical characteristics (t a =25c unless specified otherwise) input parameter symbol min. typ.* max. unit condition forward voltage v f - 1.2 1.4 v i f = 20ma reverse current i r - - 10 a v r = 4v input capacitance c in - 30 250 pf v = 0, f = 1khz output parameter symbol min. typ.* max. unit condition collector-emitter dark current i ceo - - 100 a v ce = 20v, i f = 0ma collector-emitter breakdown voltage bv ceo 80 - - v i c = 0.1ma emitter-collector breakdown voltage bv eco 7 - - v i e = 0.1ma transfer characteristics (t a =25c unless specified otherwise) parameter symbol min. typ.* max. unit condition el817 50 - 600 el817a 80 - 160 el817b 130 - 260 el817c 200 - 400 current transfer ratio el817d ctr 400 - 600 % i f = 5ma ,v ce = 5v collector-emitter saturation voltage v ce(sat) - 0.1 0.2 v i f = 1ma ,i c = 20ma isolation resistance r io 510 10 - - v io = 500vdc, 40~60% r.h. floating capacitance c io - 0.6 1.0 pf v io = 0, f = 1mhz cut-off frequency fc - 80 - khz v ce = 5v, i c = 2ma r l = 100 , -3db rise time t r - 6 18 s fall time t f - 8 18 s v ce = 2v, i c = 2ma, r l = 100 * typical values at t a = 25c
pin dip 4 photocoupler everlight electronics co., ltd. 4 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 phototransistor el817-g series typical performance curves
pin dip 4 photocoupler everlight electronics co., ltd. 5 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 phototransistor el817-g series v cc figure 10. switching time test circuit & waveforms i f i c r l r in output input pulse 10% input output pulse 90% t t r f t on t of f
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 6 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series order information part number el817(x)(y)(z)-fvg note x = lead form option (s, s1, m or none) y = ctr rank (a, b, c, d or none) z = tape and reel option (ta, tb ,tu, td or none). f = lead frame option (f: iron, none: copper) v = vde (option) g = halogens free option description packing quantity none standard dip-4 100 units per tube m wide lead bend (0.4 inch spacing) 100 units per tube s (ta) surface mount lead form + ta tape & reel option 1000 units per reel s (tb) surface mount lead form + tb tape & reel option 1000 units per reel s1 (ta) surface mount lead form (low profile ) + ta tape & reel option 1000 units per reel s1 (tb) surface mount lead form (low profile ) + tb tape & reel option 1000 units per reel s (tu) surface mount lead form + tu tape & reel option 1500 units per reel s (td) surface mount lead form + td tape & reel option 1500 units per reel s1 (tu) surface mount lead form (low profile ) + tu tape & reel option 1500 units per reel s1 (td) surface mount lead form (low profile ) + td tape & reel option 1500 units per reel
4 pin dip phototransistor everlight electronics co., ltd. 7 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series photocoupler package drawing (dimensions in mm) standard dip type option m type
4 pin dip phototransistor photocoupler el817-g series option s type option s1 type everlight electronics co., ltd. 8 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 9 http://www.everlight.com document no pds-elst-817g rev. 0 april ,18 2008 el817-g series recommended pad layout for surface mount leadform device marking 817 el g r yww v notes el denotes everlight 817 denotes device number f denotes factory code (none: china , g: china and green part) r denotes ctr rank (a, b, c, d or none) y denotes 1 digit year code ww denotes 2 digit week code v denotes vde
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 10 http://www.everlight.co m document no pds-elst-817g rev. 0 april ,18 2008 el817-g series tape & reel packing specifications option ta option tb direction of feed from reel direction of feed from reel tape dimensions dimension no. a b do d1 e f dimension(mm) 10.40.1 4.550.1 1. 50.1 1.50.05 1.750.1 7.50.1 dimension no. po p1 p2 t w k dimension(mm) 4.00.1 12. 00.1 2.00.1 0.330.1 16.0+0.3/ -0.1 4.550.1
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 11 http://www.everlight.co m document no pds-elst-817g rev. 0 april ,18 2008 el817-g series option td direction of feed from reel option tu direction of feed from reel tape dimensions dimension no. a b c d e f dimension(mm) 16.000.3 7.50.1 1. 750.1 8.00.1 2.00.1 4.00.1 dimension no. g h i j k dimension(mm) 1.5+0.1/-0 10.4 0.1 0.40.05 4.550.1 5.10.1
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 12 http://www.everlight.co m document no pds-elst-817g rev. 0 april ,18 2008 el817-g series solder reflow temperature profile 260 c (p eak ) 1 50 c 1- 3 c/sec m a x 7 0 ? 17 0 s ec 2 00 c 217 c >255 c ( 30s min ) 1- 3 c/sec m a x 6 0 ? 14 0 s ec time (s)
4 pin dip phototransistor photocoupler everlight electronics co., ltd. 13 http://www.everlight.co m document no pds-elst-817g rev. 0 april ,18 2008 el817-g series disclaimer 1. the specifications in this datasheet may be changed without notice. everlight reserves the authority on material change for above specification. 2. when using this product, please observe the absolute maximum ratings and the instructions for use as outlined in this datasheet. everlight assumes no res ponsibility for any damage resulting from use of the product which does not comply with the absolute ma ximum ratings and the instructions included in this datasheet. 3. these specification sheets include materials prot ected under copyright of everlight. reproduction in any form is prohibited without t he specific consent of everlight.


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